Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-05-01T18:06:22.252Z Has data issue: false hasContentIssue false
  • English
  • Français

X-Ray Diffraction Analysis of Damage and Doping Effects in Low-Dose, High-Energy Implanted Silicon

Published online by Cambridge University Press:  28 February 2011

Jos G.E. Klappe ,
István Bársony  and
Tom W. Ryan
Jos G.E. Klappe
Affiliation:
WMESA Research Institute, University of Twente, P.O.Box 217, 7500 AE Enschede, The Netherlands
István Bársony
Affiliation:
WMESA Research Institute, University of Twente, P.O.Box 217, 7500 AE Enschede, The Netherlands on leave from the Technical University of Budapest, Budapest, Hungary
Tom W. Ryan
Affiliation:
Philips Analytical, Lelyweg 1, 7602 EA Almelo, The Netherlands
Get access

Abstract

High-Resolution X-Ray Diffraction is investigated as a technique for analysis of low-dose, high-energy implanted (001) silicon. The choice of the proper Bragg reflection for the rocking curve measurements is showed to be of crucial importance. The (026)1 reflection appears to be the most suitable for strain caused by implantation damage. By a qualitative analysis of rocking curves taken on B and P implanted Si samples, it could be established that the minimum dose, for which HR-XRD is sensitive enough, is about 1.5.1014cm−2 and 5.1013cm−2 for P and B, respectively. The necessary minimum peak temperature that was determined for a complete damage anneal with the T-RTA of P implanted Si with energies ranging from 0.5 to 1.5 MeV, was 1400 K for all doses of P considered. For B the required optimum peak temperature is about 1375 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 185
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Wijburg, R.C., Hemink, G.J., Middelhoek, J., Wallinga, H. and Mouthaan, T.J., IEEE Trans. Electron Devices 38, (1), 111 (1991)Google Scholar
2. Bársony, I., Heideman, J.L., Klappe, J. and Middelhoek, J., Jap. J. Appl. Phys. 30,(2), 418 (1991)Google Scholar
3. Zaumseil, P., Winter, U., Fabbri, R., Servidori, M. and Solmi, S., Sol. St. Phenom. A94, 315–319 (1986)Google Scholar
4. Bartels, W.J., J. Vac. Sci. Technol. Bl, (2), 338 (1983)Google Scholar
5. EerNisse, E.P., Appl. Phys. L. 18, (12), 581 (1971)Google Scholar
6. Fukuhara, A. and Takano, Y., J. Appl. Cryst. 10, 287 (1977)Google Scholar
7. Huang, K. and Wills, H.H., Proc. Royal Soc. A 190, 102 (1947)Google Scholar
8. Tsurushima, T. and Tanoue, H., J. Phys. Soc. Japan 31, (6), 1695 (1971)Google Scholar