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Vacuum Chemical Epitaxy: High Throughput GaAs Epitaxy Without Arsine

Published online by Cambridge University Press:  28 February 2011

L. M. Fraas ,
G. R. Girard ,
V. S. Sundaram ,
Chris Master  and
Rick Stall
L. M. Fraas
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
G. R. Girard
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
V. S. Sundaram
Affiliation:
Boeing High Technology Center, P.O. Box 24969, Seattle, WA. 98124-6269
Chris Master
Affiliation:
Emcore, Inc. 35 Elizabeth Av- enue, Somerset, NJ 08873
Rick Stall
Affiliation:
Emcore, Inc. 35 Elizabeth Av- enue, Somerset, NJ 08873
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Abstract

Metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) are well established methods for growing epitaxial GaAs and AlGaAs films. However, MOCVD equip- ment uses the highly toxic gas, arsine, and MBE equipment is very costly and coats only one wafer at a time. We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated in a production environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 253
Copyright
Copyright © Materials Research Society 1989

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