Hostname: page-component-5f56664f6-w4vgn Total loading time: 0 Render date: 2025-05-07T18:51:18.910Z Has data issue: false hasContentIssue false
  • English
  • Français

UV Photostimulated Si Atomic-Layer Epitaxy

Published online by Cambridge University Press:  16 February 2011

D. Lubben ,
R. Tsu ,
T. R. Bramblett  and
J. E. Greene
D. Lubben
Affiliation:
Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, IL 61801
R. Tsu
Affiliation:
Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, IL 61801
T. R. Bramblett
Affiliation:
Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, IL 61801
J. E. Greene
Affiliation:
Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 W. Springfield Avenue, Urbana, IL 61801
Get access

Abstract

Single-crystal Si films have been grown on Si(001)2×1 substrates by UVphotostimulated atomic-layer epitaxy (ALE) from Si2H6. The ALE deposition rate R per growth cycle remains constant at 0.4 monolayers (ML) over a wide range of deposition parameters: growth temperature (Ts= 180–400 °C), Si2H6 exposure (peak pressure during gas pulse = 0.1−5 mTorr), laser energy density ( = 250–450 mJ cm−2 where is determined by Ts), and number of UV laser pulses per cycle. A film growth mocrel, based upon the results of the present deposition experiments and Monte Carlo simulations, together with our previous adsorption/desorption measurements, Is used to describe the reaction pathway for the process. The Hterminated silylene-saturated surface formed by adsorption and desorption of disilene is thermally stable and passive to further Si2H6 exposure. ArF or KrF laser pulses (≅20 ns) are used to desorb H, following a Si2H6 exposure, and the growth cycle is repeated until the desired film thickness is obtained. At Ts < 180 °C, the growth process becomes rate limited by the surface dissociation step and R decreases exponentially as a function of 1/Ts with an activation energy of ≅0.5 eV. At Ts > 400 °C, H is thermally desorbed and pyrolytic growth competes with ALE. Transmission electron micrographs together with selected-area electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 177
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Goodman, C. H. L. and Pessa, M. V., J. Appl. Phys. 60, R65 (1986).Google Scholar
2. Suntola, T., Mater. Sci. Reports, 4, 261 (1989).Google Scholar
3. Suda, Y., Lubben, D., Motooka, T. and Greene, J. E., J. Vac. Sci. Technol. A8, 61 (1990).CrossRefGoogle Scholar
4. Suda, Y., Lubben, D., Motooka, T. and Greene, J. E., J. Vac. Scd. Technol. B7, 1171 (1989).Google Scholar
5. Gates, S. M., Surf. Sci. 195, 307 (1988).Google Scholar
6. Imbihl, R., Demuth, J. E., Gates, S. M., and Scott, B. A., Phys. Rev. B 39, 5222 (1989).CrossRefGoogle Scholar
7. Suzuki, K., Lubben, D., and Greene, J. E., J. Appl. Phys. 58, 979 (1985).Google Scholar
8. Noël, J.P., Greene, J. E., Rowell, N. L., Kechang, S., and Houghton, O. C., Appl. Phys. Lett. 55, 1525 (1989).CrossRefGoogle Scholar
9. Itoh, U., Toyoshima, Y., Onuki, H., Washida, N., and Ibuki, T., J. Chem. Phys. 85, 4867 (1986).CrossRefGoogle Scholar
10. Noël, J. P., Hirashita, N., Markert, L. C., Kim, Y.-W., Greene, J. E., Knall, J., Ni, W.-X., Hasan, M. A., and Sundgren, J. E., J. Appl. Phys. 65, 1189 (1989).Google Scholar
11. Uram, K. J. and Jansson, U., J. Vac. Sci. Technol. 97, 1176 (1989).Google Scholar
12. Agrawal, Paras. M., Thompson, Donald L., and Raff, Lionel M., J. Chem. Phys. 92, 1069 (1990).Google Scholar
13. Greenlief, C. M., Gates, S. M., and Holbert, P. A., Chem. Phys. Lett. 159, 202 (1989).CrossRefGoogle Scholar
14. Kitabatake, M., Fons, P., and Greene, J. E., J. Vac. Sci. Technol. A8, 3726 (1990) and references therein.CrossRefGoogle Scholar
15. Inder Batra, P., Phys. Rev. V41, 5048 (1990).CrossRefGoogle Scholar
16. Douglas Allan, C., Joannopoulos, J. D., and Pollard, William B., Phys. Rev. B25, 1065 (1982).Google Scholar