Published online by Cambridge University Press: 25 February 2011
We report the first Hall, and electrical resistivity study on rapidly quenched icosahedral Al-based alloys. The Hall coefficient is found to be negative and remains so for i(Al-Mn) alloys even for higher Mn concentrations. The magnitude and temperature coefficient of the electrical resistivity behaviour in these alloys is similar to those observed for amorphous metallic alloys. Thus, the conduction process in i(Al-based alloys) is essentially electronic but with a carrier mobility an order of magnitude smaller than that known for crystalline aluminium.