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Thermally Induced Stresses and Strains in Laser Processing of Thin Films

Published online by Cambridge University Press:  22 February 2011

Judah A. Tuchman ,
Lisa P. Welsh  and
Irving P. Herman
Judah A. Tuchman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Lisa P. Welsh
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
Irving P. Herman
Affiliation:
Department of Applied Physics, Columbia University, New York, NY 10027
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Abstract

The stresses and strains induced in thermal laser processing of substrates and thin films on substrates, are obtained in terms of single integrals by solving the thermoelastic equations using a Gaussian profile laser as the heating source. This analysis is applied to silicon thin films on fused silica and sapphire substrates. In part, this study shows that defects can form in the films because the stresses induced during high temperature laser processing of silicon and similar materials can exceed the yield stress under certain experimental conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 130: Symposium C – Thin Films: Stresses and Mechanical Properties I , 1988 , 333
Copyright
Copyright © Materials Research Society 1989

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References

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