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Testing of porous silicon membranes as a novel humidity sensor

Published online by Cambridge University Press:  17 March 2011

L. Quercia ,
M. Della Noce ,
V. La Ferrara  and
G. Di Francia
L. Quercia
Affiliation:
ENEA Centro Ricerche Portici, I-80055 Portici, (Italy) e-mail: [email protected]
M. Della Noce
Affiliation:
ENEA Centro Ricerche Portici, I-80055 Portici, (Italy
V. La Ferrara
Affiliation:
ENEA Centro Ricerche Portici, I-80055 Portici, (Italy
G. Di Francia
Affiliation:
ENEA Centro Ricerche Portici, I-80055 Portici, (Italy
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Abstract

A new gas sensor device based on a porous silicon membrane has been fabricated. The sensible membrane has been bonded to a 1 cm2 Al2O3 substrate [1], where electrical contacts have been previously deposited by vacuum evaporation. In this work we present the results of DC measurements showing a good response of this device to humidity gradients. In this frame, the most striking properties of our device are its selectivity and a fast and full recovery after exposure to humidity levels up to 90%. Moreover, the new fabrication process used to realize the sensor merges the advantages typical of porous silicon with thin film ones, by means of a simple process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.32.1
Copyright
Copyright © Materials Research Society 2001

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References

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