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Temperature Dependence of Surface Morphology of Silicon Grown on CaF2/Si by Electron Beam Assisted Mbe

Published online by Cambridge University Press:  03 September 2012

P.O. Pettersson ,
R.J. Miles  and
T.C. Mcgill
P.O. Pettersson
Affiliation:
Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125
R.J. Miles
Affiliation:
Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125
T.C. Mcgill
Affiliation:
Department of Applied Physics, California Institute of Technology, Pasadena, CA 91125
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Abstract

We present the results of electron beam assisted molecular beam epitaxy (EB-MBE) on the growth mode of silicon on CaF2/Si(111). By irradiating the CaF2 surface with low energy electrons, the fluorine is desorbed, leaving an ordered array of F-centers behind. Using atomic force microscopy (AFM), we do not detect any surface damage on the CaF2 layer due to the low energy electron irradiation. The surface free energy of the CaF2 is raised due to the F-center array and the subsequent silicon layer is smoother. Using AFM and X-ray photoelectron spectroscopy (XPS), we find an optimal range of exposures for high temperature (650°C) growth of the silicon overlayer that minimizes surface roughness of the silicon overlayer and we present a simple model based on geometrical thermodynamics to explain this.

We observed a similar optimal range of exposures that minimizes the surface roughness for medium (575°C) and low (500°C) growth temperatures of the silicon layer. We present an explanation for this growth mode based on kinetics.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 367: Symposium P – Fractal Aspects of Materials , 1994 , 305
Copyright
Copyright © Materials Research Society 1995

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