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Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

Published online by Cambridge University Press:  17 March 2011

Lilya Ihaddadene-Lecoq ,
Jerome Marcon  and
Kaouther Ketata
Lilya Ihaddadene-Lecoq
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
Jerome Marcon
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
Kaouther Ketata
Affiliation:
Laboratory of Electronic Microtechnology and Instrumentation (LEMI)University of ROUEN, 76821 Mont saint Aignan, France
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Abstract

We have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C8.9
Copyright
Copyright © Materials Research Society 2004

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