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Structure and Optical Properties of Si/InAs/Si Layers Grown by MBE on Si Substrate at Different Temperatures

Published online by Cambridge University Press:  10 February 2011

N.D. Zakharov ,
P. Werner ,
U. Gösele ,
R. Heitz ,
D. Bimberg ,
N.N. Ledentsov ,
V.M. Ustinov ,
B.V. Volovik ,
ZH.I. Alferov  and
N.K. Polyakov
...Show all authors
N.D. Zakharov
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2, [email protected], GERMANY
P. Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2
U. Gösele
Affiliation:
Max-Planck Institute of Microstructure Physics, 06120 Halle/Saale, Weinberg 2
R. Heitz
Affiliation:
Technical University of Berlin, Berlin, Germany
D. Bimberg
Affiliation:
Technical University of Berlin, Berlin, Germany
N.N. Ledentsov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.M. Ustinov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
B.V. Volovik
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
ZH.I. Alferov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
N.K. Polyakov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.N. Petrov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
V.A. Egorov
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
G.E. Cirlin
Affiliation:
A.F.Ioffe Phisico-Technical Institute RAS, St.Petersburg, RUSSIA
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Abstract

Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 800°C, and 880°C were investigated by High Resolution Transmission Electron Microscopy (HRTEM). Extensive interdiffusion at 800°C leads to the formation of an InAs solid solution as well as InAs-enriched regions with extensions of ∼6nm, which exhibit two kinds of ordering. The ordering of InAs molecules occurred, respectively, in {110} planes inclined and parallel to the [001] growth direction. It is attributed to the energy gain from the reduced number of mixed Si-As and Si-In bonds. The sample grown at 800°C shows photoluminescence in the 1.3.µm region, which is tentatively attributed to the recombination of excitons localised in the ordered regions

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 249
Copyright
Copyright © Materials Research Society 2000

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References

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