Hostname: page-component-669899f699-swprf Total loading time: 0 Render date: 2025-05-04T17:48:56.319Z Has data issue: false hasContentIssue false
  • English
  • Français

A Spectromicroscopic Study of Corrosion in AI-Cu-Si Metallization

Published online by Cambridge University Press:  21 February 2011

S. Liang ,
A.K. Ray-Chaudhuri ,
W. Ng ,
S. Singh ,
J.T. Welnak  and
F. Cerrina
S. Liang
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
A.K. Ray-Chaudhuri
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
W. Ng
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
S. Singh
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
J.T. Welnak
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
F. Cerrina
Affiliation:
Center for X-ray Lithography, University of Wisconsin - Madison, 3731 Schneider Dr., Stoughton, WI 53589
Get access

Abstract

Soft X-ray photoelectron spectromicroscopy has been employed to examine the microstructural chemistry of corrosion on thin films of AL-i%Cu-1%Si alloy. Cu-rich precipitates are formed after the film is annealed at around 320ºC Localized corrosion takes place around these precipitates, and circular microstructures have been observed. Energy distribution curves (EDCs) taken at specific points are analyzed and photoelectron images were obtained from different kinetic energies corresponding to the peaks in EDC. It was found that after corrosion the Al2Cu particles are revealed and distributed at the center of the corrosion structure with oxide as matrix, while the oxides form a ring-like band outside.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 309: Symposium M2 – Materials Reliability in Microelectronics III , 1993 , 449
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Sabnis, A.G., VLSI Reliability, (Academic Press, San Diego, CA), 1990.Google Scholar
2. Comizzoli, R.B., Frankenthal, R.P., Miller, P.C. and Sinclair, J.D., Science, 234, 340(1986).Google Scholar
3. Ames, I., D'Heurle, F.M. and Horstmann, R.E., IBM J. Res. Develop., 14, 461 (1970).CrossRefGoogle Scholar
4. Turner, T. and Wendel, K., em 23rd Ann. Proc. Reliab. Phys. Symp., pp. 142 (1985).Google Scholar
5. Mayumi, S., Umemoto, T., shishino, M., Nanatsue, H., Ueda, S. and Inoue, M., 25th Ann. Proc. Reliab. Phys. Symp., pp. 13 (1987).Google Scholar
6. Herman, D.S., Shuster, M.A. and Gerber, R.M., J. Vac. Sci. Technol., 9, 515 1972).Google Scholar
7. Scully, J.R., Peebles, D.E., Romig, A.D. Jr., Hrear, D.R. and Hills, C.R., metall. Trans., A(23), 2461(1992).Google Scholar
8. Rosenberg, R., Sullivan, M.J. and Howard, J.K. in Thin films-Interdiffusion and Reactions, Poate, J.M., Tu, K.N. and Mayer, J.W., eds.(Wiley, New York), 1978.Google Scholar
9. Thomas, S. and Berg, H.M., IEEE Trans. Components, Hybrids, Manufact. Technol., 10, 252 (1987).Google Scholar
10. Mayumi, S., Murozono, I., Nanatsue, H. and Ueda, S., J. Electrochem. Soc., 137, 1861 (1990).Google Scholar
11. Lawrence, J.D. and McPherson, J.W., IEEE Ann. Int. Reliab. Phys., pp. 102 (1991).Google Scholar
12. Frear, D.R., Michael, J.R., Kim, C., Romig, A.D. Jr., and Morris, J.W. Jr., SPIE, 1596, 72(1991).Google Scholar
13. Capasso, C., Ray-Chaudhuri, A., Ng, W., Liang, S., Cole, R., Wallace, J., and Cerrina, F., J. Vac. Sci. Technol., A9(3), 1248(1991).Google Scholar
14. Cerrina, F., J. Imag. Sci., 30, 80(1986).Google Scholar
15. Ng, W., Ray-Chaudhuri, A.K., Liang, S., Welnak, J., Wallace, J., Singh, S., Capasso, C., Cerrina, F., Margaritonda, G., Underwood, J.H., Kortright, J.B. and Perera, R.C.C., SPIE Proc., 1992 (in Press).Google Scholar
16. Hufner, S. in Photoemission in Solids Ley, H. L. and Cardona, M., eds., (Springer-Verlag, New York), Chapt. 3 (1979).Google Scholar
17. Cooper, J.W., Phys. Rev., 128, 681(1962); U. Fano and J.W. Cooper, Rev. Mod. Phys., 40, 441(1968); ibid, 41, 724(1969).Google Scholar