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Si-On-Insulator Formation Using a Line-Source Electron Beam

Published online by Cambridge University Press:  25 February 2011

J.A. Knapp
J.A. Knapp*
Affiliation:
Sandia National Laboratories, Albuquerque, NM87185, USA
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Abstract

A line-source electron beam has been used to melt and recrystallize isolated Si layers to form Si-on-Insulator structures, and the processis simulated by heat flow calculations. Using sample sweep speeds of 100-600 cm/s and peak power densities up to 75 kW/cm2 in the 1 × 20 mm beam, we have obtained single-crystal areas as large as 50 × 350 μIm. Seed openings to the substrate are used to control the orientation of the regrowth and the heat flow in the recrystallizing film. A finite-element heat flow code has been developed which correctly simulates the experimental results and which allows the calculation of untried sample configurations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 619
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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