Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-05-06T20:20:03.383Z Has data issue: false hasContentIssue false
  • English
  • Français

SiCx Layers on Diamond by Si Implantation for Protection Against High Temperature Oxidation

Published online by Cambridge University Press:  21 February 2011

A.R. Kirkpatrick ,
S. Dallek  and
W.E. Kosik
A.R. Kirkpatrick
Affiliation:
Epion Corporation, 4R Alfred Circle, Bedford, MA 01730
S. Dallek
Affiliation:
Naval Surface Warfare Center, Carderock Division, Silver Spring, MD 20903
W.E. Kosik
Affiliation:
U.S. Army Research Laboratory, Watertown, MA 02172
Get access

Abstract

Diamond is subject to oxidation if exposed to oxygen while at temperatures above approximately 600°C. A method has been demonstrated for protection of diamond against oxidation by employing Si+ ion implantation to transform a thin surface layer into silicon carbide which exhibits excellent oxidation resistance. Integral SiCx oxidation barrier layers have been formed on diamond using high Si+ dose levels and high temperatures during implantation. SiCx layers have been characterized using Rutherford backscattering, IR spectrophotometry and scanning electron microscopy. The effects of high temperature exposure to oxygen have been examined using various oxidation test procedures including thermogravimetric analysis. SiCx layers capable of providing protection of underlying diamond for periods of several minutes at temperatures beyond 1000°C have been accomplished.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 225
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Seal, M., Phys. Status Solidi 3, 658 (1963)Google Scholar
2 Evans, T. and Phaal, C., Proc. 5th Carbon Conf., Univ. Park PA 1961, 1, 147 (1962)Google Scholar
3 Dallek, S., Kabacoff, L. and Norr, M., Thermochimica Acta 192, 321 (1991)Google Scholar
4 Johnson, C.E., Hasting, M.A.S. and Weimer, W.A., J. Mater. Res., Vol. 5, 11, 2320 (1990)Google Scholar
5 Nimmagadda, R.R., Joshi, A. and Hsu, W.L., J. Mater. Res., Vol. 5, 11, 2445 (1990)Google Scholar
6 Klemm, K., Patterson, H.S., Johnson, L.F. and Moran, M.B., SPIE Proc. Vol. 2286, 347 (1994)Google Scholar
7 Spitzer, W.G., Kleinman, D.A. and Frosh, C.J., Phys. Rev. 113, 133 (1959)Google Scholar