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Semitransparent Silicide Electrode Formed on the Surface of a-Si:H

Published online by Cambridge University Press:  21 February 2011

T. Tsukada ,
K. Seki ,
H. Yamamoto  and
A. Sasano
T. Tsukada
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
K. Seki
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
H. Yamamoto
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
A. Sasano
Affiliation:
Central Research Laboratory, Hitachi, Ltd.1–280 Higashi-Koigakubo, Kokubunji, Tokyo 185, JAPAN
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Abstract

Thin silicide layers are found to be formed through solid state reaction between hydrogenated amorphous silicon(a-Si:H) and metals. The method of formation of the silicide layer is very simple: deposition of metal on top of amorphous silicon layer and annealing and etching of the residual metal layer. The reaction kinetics and properties of this layer are described. The thickness of this silicide layer is estimated to be 5 nm. Accordingly, it can be used as a transparent electrode in a-Si:H photodiodes. Photodiodes using this semitransparent electrode have as good optical and electrical properties as conventional a-Si:H photodiodes using ITO(indium tin oxide). Schottky barrier characteristics are also de-scribed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 33: Symposium D – Comparison of Thin Film Transistor and SOI Technologies , 1984 , 301
Copyright
Copyright © Materials Research Society 1984

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References

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