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Semi-Empirical Model for Boron Diffusion During Rapid Thermal Annealing of BF2 Implanted Silicon

Published online by Cambridge University Press:  21 February 2011

Tzu-Hsin Huang ,
H. Kinoshita  and
D. L. Kwong
Tzu-Hsin Huang
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
H. Kinoshita
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center Department of Electrical and Computer EngineeringThe University of Texas at Austin, Austin, TX 78712
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Abstract

The mechanism of the enhanced diffusion of boron during rapid thermal annealing (RTA) of BF2-implanted Si has been investigated, and a diffusion model is accordingly developed for a wide range of implant and annealing conditions. Simulation results are in excellent agreement with experiments for BF2 implant doses from 2×1013 to 5×1015cm−2, implant energies from 6 to 45 keV, and annealing temperatures from 950 to 1100°C. This model not only accounts for the transient enhanced diffusion due to the annealing of point-defect clusters and dislocation loops, but also for the retarded diffusion due to dopant precipitation. All the parameters used in this model are analytically determined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 277
Copyright
Copyright © Materials Research Society 1993

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References

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