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Semiconductor Crystal Growth and Segregation Problems on Earth And in Space

Published online by Cambridge University Press:  15 February 2011

Harry C. Gatos
Harry C. Gatos*
Affiliation:
Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

Crystals grown from the melt exhibit compositional and structural defects which limit the exploitation of their full potential in solid state electronics. The origin of these defects is related primarily to gravity-induced convective currents in the melt. In semiconductor compounds additional problems are introduced from variations in stoichiometry. Progress has been made recently in relating qualitatively, and in some instances quantitatively, the growth parameters to the materials properties of the crystals, and in turn to their electronic properties. Overcoming the presence of gravitational forces in space eliminates or minimizes convective interference and, thus, the quantitative assessment of the key growth parameters controlling the chemical and structural perfection of single crystals becomes possible. Results (obtained on earth) will be presented on the growth-property relationships of elemental and compound semiconductors. The advantages, as well as the limitations, that zero gravity conditions present for crystal growth will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 9 , 1981 , 355
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. See, for example, Semiconductor Silicon 1981, Huff, H.R., Kriegler, R.J. and Takeishi, Y., eds., (The Electrochemical Society, Inc., Princeton, N.J., 1981).Google Scholar
2. See, for example, Gallium Arsenide and Related Compounds 1978 (Conference Series, The Institute of Physics, Bristol and London).Google Scholar
3.Camp, P.R., J. Appl. Phys. 25, 459 (1954);Google Scholar
3aBillig, E., Proc. Roy. Soc. (London) 229, 346 (1955).Google Scholar
4.Gatos, H.C., Strauss, A.J., Lavine, M.C. and Harman, T.C., J. Appl. Phys. 32, 2057 (1961).Google Scholar
5.Witt, A.F. and Gatos, H.C., J. Electrochem. Soc. 113, 808 (1966).Google Scholar
6.Kim, K.M., Witt, A.F. and Gatos, H.C., J. Electrochem. Soc. 119, 1218 (1972).Google Scholar
7.Holmes, D.E. and Gatos, H.C., J. Electrochem. Soc. 128, 429 (1981).Google Scholar
8.Holmes, D.E. and Gatos, H.C., J. Appl. Phys. 52, 2971 (1981).Google Scholar
9.Murgai, A., Gatos, H.C. and Westdorp, W.A., J. Electrochem. Soc. 126, 2240 (1979).Google Scholar
10.Burton, J.A., Prim, R.C. and Slichter, W.P., J. Chem. Phys. 21, 1987 (1953).Google Scholar
11.Murgai, A., Gatos, H.C. and Witt, A.F., J. Electrochem. Soc. 123, 224 (1975).Google Scholar
12.Chi, J.Y. and Gatos, H.C., J. Appl. Phys. 50, 3433 (1979).Google Scholar
13.Jastrzebski, L., Lagowski, J. and Gatos, H.C., J. Electrochem. Soc. 126, 260 (1979).Google Scholar
14.Jastrzebski, L., Lagowski, J., Walukiewicz, W. and Gatos, H.C., J. Appl. Phys. 51, 2301 (1980).Google Scholar
15.Parsey, J.M., Nanishi, Y., Lagowski, J. and Gatos, H.C., J. Electrochem. Soc., in press.Google Scholar
16.Suzuki, T., Akai, S., Kohe, K., Nishida, Y., Fujita, K. and Kito, N., Sumitomo Electric Technical Review 18, 105 (1978).Google Scholar
17.Lagowski, J., Gatos, H.C., Parsey, J.M., Wada, K., Kaminska, M. and Walukiewicz, W., Appl. Phys. Lett., in press.Google Scholar
18.Milnes, A.G., Deep Impurities in Semiconductors, Wiley, New York, 1973, p. 57.Google Scholar
19.Huber, A.M., Linh, N.T., Valldon, M., Debrun, J.L., Martin, G.M., Mitonneau, A. and Mircea, A., J. Appl. Phys. 50, 4022 (1979).Google Scholar
20.Kaminska, M., Lagowski, J., Parsey, J., Wada, K. and Gatos, H.C., Gallium Arsenide and Related Compounds 1981, (Conference Series, The Institute of Physics, Bristol and London) in press.Google Scholar
21.Witt, A.F., Gatos, H.C., Lichtensteiger, M., Lavine, M.C. and Herman, C.J., J. Electrochem. Soc. 122, 276 (1975).Google Scholar
22.Witt, A.F., Gatos, H.C., Lichtensteiger, M. and Herman, C.J., J. Electrochem. Soc. 125, 1832 (1978).Google Scholar
23. Other experiments carried out under near-zero gravity conditions have been documented in reports issued by the National Aeronautics and Space Administration, Washington, D. C.Google Scholar
24.Witt, A.F., Lichtensteiger, M. and Gatos, H.C., J. Electrochem. Soc. 120, 1119 (1973).Google Scholar