Hostname: page-component-669899f699-tzmfd Total loading time: 0 Render date: 2025-05-02T19:26:44.299Z Has data issue: false hasContentIssue false
  • English
  • Français

Room-Temperature HF Vapour-Phase Cleaning for LPCVD EPI of Si and SiGe

Published online by Cambridge University Press:  25 February 2011

A.E.T. Kuiper  and
E.G.C. Lathouwers
A.E.T. Kuiper
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
E.G.C. Lathouwers
Affiliation:
Philips Research Laboratories, 5600 JA Eindhoven, The Netherlands
Get access

Abstract

Silicon dioxide films can be etched in a mixture of HF and H2O vapour. This process can be performed at reduced pressure, which has allowed us to develop a highvacuum compatible etch facility. Channelling-RBS analysis demonstrates the feasibility of epitaxial LPCVD of Si and SiGe layers at 600°C on Si(100) substrates that previously have been vapour-etched in situ at room temperature. With RBS also kinetic information about these deposition reactions can be derived.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 473
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Deal, B.E., McNeilly, M.A., Kao, D.B., deLarios, J.M., Solid State Techn. 33, 73 (1990).Google Scholar
[2] Kuiper, A.E.T., Surf.Interface Anal. 16, 29 (1990).Google Scholar
[3] Buss, R.J., Ho, P., Breiland, W.G., Coltrin, M.E., J.Appl.Phys. 63, 2808 (1988).Google Scholar
[4] Racanelli, M., Greve, D.W., Appl.Phys.Lett. 58, 2096 (1991).Google Scholar
[5] Meyerson, B.S., Uram, K.J., LeGoues, F.K., Appl.Phys.Lett. 53, 2555 (1988).Google Scholar
[6] Robbins, D.J., Glasper, J.L., Cullis, A.G., Leong, W.Y., J.Appl.Phys. 69, 3729 (1991).Google Scholar
[7] Racanelli, M., Greve, D.W., Appl.Phys.Lett. 56, 2524 (1990).Google Scholar
[8] Fitzgerald, E.A., Xie, Y.-H., Green, M.L., Brasen, D., Kortan, A.R., Michel, J., Mii, Y.-J., Weir, B.E., Appl.Phys.Lett. 59, 811 (1991)Google Scholar