Hostname: page-component-669899f699-7xsfk Total loading time: 0 Render date: 2025-05-04T10:09:07.075Z Has data issue: false hasContentIssue false
  • English
  • Français

Regrowth of Amorphized Compound Semiconductors

Published online by Cambridge University Press:  25 February 2011

W.G. Opyd  and
J.F. Gibbons
W.G. Opyd
Affiliation:
Also Lockheed Research and Development Division, Palo Alto, CA 94304
J.F. Gibbons
Affiliation:
Stanford Electronics Laboratories, Stanford University, Stanford, CA 94305
Get access

Abstract

Epitaxial regrowth is investigated for layers of InSb and GaAs amorphized by liquid nitrogen temperature ion implants. Experimental criterion for amorphization and limitation of regrowth are correlated with damage calculated by a Boltzmann transport equation approach to ion implant modeling. Conditions for complete epitaxial regrowth as determined by channeled Rutherford backscattering spectrometry are presented with evaluation of residual defects by transmission electron microscopy. Electrical activation following regrowth of GaAs is reported and correlated with calculated damage profiles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 45: Symposium A – Ion Beam Processes in Advanced Electronic Materials and Device Technology , 1985 , 273
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Christel, L. A. and Gibbons, J. F., J. Appl. Phys. 52, 5050 (1981).Google Scholar
2. Crowder, B. L., J. Electrochem. Soc. 117, 671 (1970).CrossRefGoogle Scholar
3. Williams, J. S. and Austin, M. W., Appl. Phys. Lett. 36, 994 (1980).Google Scholar
4. Grimaldi, M. G., Paine, B. M., Nicolet, M.-A. and Sadana, D. K., J. Appl. Phys. 52, 4032 (1981).Google Scholar
5. Nissim, Y. I., Stanford University Ph.D. dissertation, June 1981.Google Scholar
6. Bhattacharya, R. S., Rai, A. K., Yeo, Y. K., Pronko, P. P., Ling, S. C., Wilson, S. R. and Park, Y. S., J. Appl. Phys. 54, 2329 (1983).Google Scholar
7. Sadana, D. K., Sands, T. and Washburn, J., Appl. Phys. Lett. 44, 301 (1984).Google Scholar
8. Vook, F. L., Radiation Damage and Defects in Semiconductors. (London Institute of Physics, 1972) p. 60.Google Scholar
9. Swanson, M. L., Parsons, J. R. and Hoelke, C. W., Rad. Effects 9, 249 (1971).Google Scholar
10. Christel, L. A., Gibbons, J. F. and Sigmon, T. W., J. Appl. Phys. 52, 7143 (1981).Google Scholar
11. Harrison, W. A., Electronic Structure and the Properties of Solids, Freeman, W. H., San Francisco (1980) p. 176.Google Scholar
12. Vook, F. L. and Stein, H. J., Rad. Effects 2, 23 (1969).Google Scholar
13. Williams, J. S., Adams, F. M. and Rossiter, K. G., Thin Films and Interfaces, Ho, P. S. and Tu, K. N., eds., North-Holland, New York (1982) p. 183.Google Scholar