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Rashba spin-orbit coupling in InGaAs/InP quantum wires

Published online by Cambridge University Press:  15 March 2011

Jens Knobbe ,
Vitaliy A. Guzenko  and
Thomas Schäpers
Jens Knobbe
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Vitaliy A. Guzenko
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
Thomas Schäpers
Affiliation:
Institute of Thin Films and Interfaces (ISG-1), Research Centre Jülich, 52425 Jülich, Germany
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Abstract

The effect of Rashba spin-orbit coupling on the transport properties of InGaAs/InP quantum wire structures is investigated. The geometry of the wire structures was defined by selective wet chemical etching. For wires without a gate a clear beating pattern, due to the presence of the Rashba spin-orbit coupling, is observed for wires with a width down to 600 nm. For narrower wires no beating pattern is found. The experimental observations are explained by contribution of the Rashba spin-orbit coupling to the one-dimensional magnetosubbands. By depleting the one-dimensional conductor by means of a gate electrode the Rashba coupling strength could be controlled.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G5.7
Copyright
Copyright © Materials Research Society 2004

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