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Possible Operation of Periodically Layered Nanocrystalline Porous Silicon as an Acoustic Band Crystal Device

Published online by Cambridge University Press:  01 February 2011

Akira Kiuchi ,
Bernard Gelloz ,
Akira Kojima  and
Nobuyoshi Koshida
Akira Kiuchi
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Univ. of A & T
Bernard Gelloz
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Univ. of A & T
Akira Kojima
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Univ. of A & T
Nobuyoshi Koshida
Affiliation:
Department of Electrical and Electronic Engineering, Tokyo Univ. of A & T
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Abstract

It is shown that the periodic stacked structures of nanocrystalline porous silicon (nc-PS) layers with controlled densities and elastic properties act as an acoustic band crystal (ABC) device. Supposing that the periodic nc-PS layers are formed by conventional modulated anodization technique to fabricate the multi-layered distributed Brag reflection mirror, the acoustic wave propagation modes are investigated theoretically for various structural parameters. According to the calculation results, a significant acoustic band gaps are generated in the ultrasonic regions due to a big contrast in the elastic constant produced between low-porosity and compact nc-PS layers. The propagation of acoustic wave can be completely suppressed in the characteristic band determined from designed parameters. The present result suggests further possibility of the nc-PS layer as a key component of ABC devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F3.7
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Shinoda, H., Nakajima, T., Yoshiyama, M. and Koshida, N., Nature 400, 853 (1999).Google Scholar
2. Takahashi, M. and Koshida, N., J. Appl. Phys. 86, 5274 (1999).Google Scholar
3. Jusserand, B. et al., Phys. Rev. B 33, 2897 (1986).Google Scholar
4. Bellet, D., in Properties of Porous Silicon, Chapt 4, ed. Canham, L. (IEE, 1997) pp. 127–131.4.Google Scholar
5. Rytov, S. M., Sov. Phys. Acoust. Vol. 2 68 (1956).Google Scholar