Hostname: page-component-55f67697df-zpzq9 Total loading time: 0 Render date: 2025-05-11T23:04:49.181Z Has data issue: false hasContentIssue false
  • English
  • Français

Positive and Negative Photoconductivity in Lead Telluride Doped With Gallium Epitaxial Films

Published online by Cambridge University Press:  10 February 2011

B.A. Akimov ,
V.A. Bogoyavlenskiy ,
L.I. Ryabova  and
V.N. Vasil'kov
B.A. Akimov
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
V.A. Bogoyavlenskiy
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
L.I. Ryabova
Affiliation:
Low Temperature Physics Department, Moscow State University, Moscow 119899, Russia
V.N. Vasil'kov
Affiliation:
Research Development and Production Center ORION, Moscow 111123, Russia
Get access

Abstract

We report on the photoconductivity and transient in n-PbTe(Ga) epitaxial films prepared by the hot wall technique on the <11 I>-BaF2 substrates. Photoconductivity measurements performed under continuous and pulse illumination in the temperature range 4.2-300 K give the photoresponse to be composed from negative and positive parts. The experimental results are interpreted assuming the mixed valence of Ga in lead telluride.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 607: Symposium OO – Infrared Applications of Semiconductors III , 1999 , 327
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Lo, I., Mitchel, W. C., Manasreh, M. O., Stutz, C. E., and Evans, K. R., Appl. Phys. Lett. 60, 751 (1992); I. Lo, W. C. Mitchel, R. Kaspi, and S. Elhamri, Appl. Phys. Lett. 65, 1024 (1994); A. S. Chaves and H. Chacham, Appl. Phys. Lett. 66, 727 (1995); F.-C. Wang, W. E. Zhang, C. H. Yang, M. J. Yang, and B. R. Bennett, Appl. Phys. Lett. 69, 1417 (1996).Google Scholar
2. Lo, I., Chen, S. J., Lee, Y. C., Tu, L.W., Mitchel, W. C., Ahoujja, M., Perrin, R. E., Tu, R. C., Su, Y. K., Lan, W. H., and Tu, S. L., Phys. Rev. B 57, R6819 (1998).Google Scholar
3. Oliveira, A. G. de, Ribeiro, G. M., Soares, D. A. W., and Chacham, H.. Appl. Phys. Lett. 64, 2258 (1994).Google Scholar
4. Kazmin, S. A., Kaidanov, V. I., and Shevchenko, S. S., Fiz. Tekh. Poluprovodn. 19, 530 (1985) [Sov. Phys. Semicond. 19, 328 (1985)].Google Scholar
5. Zasavitskii, I. I., Matsonashvili, B. N., and Trofimov, V. T., Fiz. Tekh. Poluprovodn. 23, 2019 (1989) [Sov. Phys. Semicond. 23, 1249 (1989)].Google Scholar
6. Zasavitskii, I. I., Lischka, K., and Heinrich, H., Fiz. Tekh. Poluprovodn. 19, 1058 (1985) [Sov. Phys. Semicond. 19, 648 (1985)].Google Scholar
7. Akimov, B. A., Dmitriev, A. V., Khokhlov, D. R., and Ryabova, L. I., Phys. Status Solidi A 137, 9 (1993).Google Scholar
8. Mooney, P. M., J. Appl. Phys. 67, RI (1990).Google Scholar
9. Akimov, B. A., Bogoyavlenskiy, V. A., Ryabova, L. I., Vasil'kov, V. N., and Zimin, S. P., Semicond. Sci. Technol. 19, 679 (1999).Google Scholar
10. Drabkin, I. A. and Moizhes, B. Y., Fiz. Tekh. Poluprovodn. 15, 625 (1981) [Sov. Phys. Semicond. 15, 357 (1981)].Google Scholar
11. Akimov, B. A., Albul, A. V., and Ryabova, L. I., Fiz. Tekh. Poluprovodn. 29, 2158 (1995) [Sov. Phys. Semicond. 29, 1125 (1995)].Google Scholar
12. Belogorokhov, A. I., Ivanchik, I. I., Khokhlov, D. R., and Ponomarev, S. V., Bras. J. Phys. 26, 308 (1996).Google Scholar
13. Vasil, A. N. 'ev, Voloshok, T. N., Kuvshinnikov, S. V., and Volkov, B. A., Zh. Eksp. Teor. Fiz. 87, 1859 (1998) [Sov. Phys. JETP 87, 1009 (1998)].Google Scholar
14. Volkov, B. A. and Ruchaiskii, O. M., Pis'ma Zh. Eksp. Teor. Fiz. 62, 205 (1995) [JETP Lett. 62, 217 (1995)].Google Scholar