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ORDER-DISORDER TRANSITIONS IN STRAINED SEMICONDUCTOR SYSTEMS

Published online by Cambridge University Press:  28 February 2011

A. OURMAZD  and
J. C. BEAN
A. OURMAZD
Affiliation:
AT&T BELL LABORATORIES, HOLMDEL, NJ 07733
J. C. BEAN
Affiliation:
AT&T BELL LABORATORIES, MURRAY HILL, NJ 07974
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Abstract

We describe the observation of a strain-induced order-disorder transition in the alloy layers of a GeSi/Si superlattice and discuss the possible implications of the transition for the opto-electronic properties of this important system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 377
Copyright
Copyright © Materials Research Society 1986

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References

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