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Optical Photoluminescence due to the Recombination of Donor-Acceptor Pairs in Porous Silicon

Published online by Cambridge University Press:  17 March 2011

J. P. Zheng  and
X. Wei
J. P. Zheng
Affiliation:
Department of Electrical and Computer Engineering, Florida A&M University and Florida State University, Tallahassee, FL 32310, USA
X. Wei
Affiliation:
The National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
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Abstract

The temperature dependence of the intensity, peak-wavelength, and bandwidth of photoluminescence (PL) spectra was studied in the porous silicon (PS) sample. To explain the observed temperature dependence, we proposed a model for the origin of the PL in PS. At low temperatures, the photon emission was dominated by the recombination of donor-acceptor pairs with ionization energies of about 4 meV. The donor and the acceptor were spatially separated with a distance of about 3.8 nm, which was about the crystalline size of the PS. Whereas at high temperatures where thermal energy exceeded the ionization energy, the photon emission was mainly from the exciton recombination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F3.4.1
Copyright
Copyright © Materials Research Society 2001

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