Hostname: page-component-669899f699-swprf Total loading time: 0 Render date: 2025-05-06T02:37:46.680Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Characterization of 100 eV C+ Ion Doped GaAs

Published online by Cambridge University Press:  22 February 2011

Tsutomu Iida ,
Yunosuke Makita ,
Shinji Kimura ,
Stefan Winter ,
Akimasa Yamada ,
Hajime Shibata ,
Akira Obara ,
Shigeru Niki ,
Paul Fons  and
Yushin Tsai
...Show all authors
Tsutomu Iida
Affiliation:
Agency of Industrial Science and Technology fellowship scientist and on leave from Universitat Konstanz, Fakultät Physik, W-7750 Konstanz, Germany
Yunosuke Makita
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Shinji Kimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Stefan Winter
Affiliation:
Agency of Industrial Science and Technology fellowship scientist and on leave from Universitat Konstanz, Fakultät Physik, W-7750 Konstanz, Germany
Akimasa Yamada
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Hajime Shibata
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Akira Obara
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Shigeru Niki
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan
Paul Fons
Affiliation:
Science and Technology Agency (STA) fellowship scientist and from April 1, 1993 at Electrotechnical laboratory
Yushin Tsai
Affiliation:
On leave from Meiji University, 1-1-1 Higashi-mita, Tama, Kawasaki 214, Japan
Shin-ichiro Uekusa
Affiliation:
Meiji University, 1-1-1 Higashi-Mita, Tama, Kawasaki 214, Japan
Get access

Abstract

Low energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 357
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

[1] Malik, R.J., Nottenberg, R.N., Schubert, E.F., Walker, J.F., and Ryan, R.W., Appl. Phys. Lett. 53, 2661 (1988)Google Scholar
[2] Giannini, C., Fischer, A., Lange, C., Ploog, K., and Tapfer, L., Appl. Phys. Lett. 61, 183 (1992)Google Scholar
[3] Abernathy, C.R., Pearton, S.J., Ren, F., Hobson, W.S., Fullowan, T.R., Katz, A., Jordan, A.S., and Kovalchick, J., J.Cryst. Growth 105, 375 (1990)Google Scholar
[4] Amarger, V., Dubon-Chevallier, C., Gao, Y., and Descouts, B., J. Appl. Phys. 71, 5694 (1992)Google Scholar
[5] Makita, Y., Nomura, T., Yokota, M., Matsumori, T., Izumi, T., Takeuchi, Y., and Kudo, K., Appl. Phys. Lett. 47, 623 (1985)Google Scholar
[6] Nomura, T., Makita, Y., Irie, K., Ohnishi, N., Kudo, K., Tanaka, H., and Mitsuhashi, Y., Appl. Phys. Lett. 48, 1745 (1986)Google Scholar
[7] Makita, Y., Takeuchi, Y., Ohnishi, N., Nomura, T., Kudo, K., Tanaka, H., Lee, H.-C., Mori, M., and Mitsuhashi, Y., Appl. Phys. Lett. 49, 1184 (1986)Google Scholar
[8] Shibata, H., Makita, Y., Mori, M., Nakayama, Y., Takahashi, T., Yamada, A., Mayer, K. M., Ohnishi, N., and Beye, A. C., GaAs and related compounds 1989,245 Google Scholar
[9] Beye, A. C., Garcia, J. C., Neu, G., Contour, J. P. and Massies, J., Solid State Commun. 67,1239 (1988)Google Scholar
[10] Shigetomi, S., Makita, Y., Beye, A.C., Yamada, A., Ohishi, N., and Matsumori, T., J. Appl. Phys. 69,1613 (1991)Google Scholar
[11] Makita, Y., Tanaka, H., Mori, M., Ohnishi, N., Phelan, P., Shigetomi, S., Shibata, H., and Matsumori, T., J. Appl. Phys. 65, 248 (1989)Google Scholar
[12] Makita, Y., Shigetomi, S., Mori, M., Ohnishi, N., Phelan, P. and Matsumori, T., Mat. Res. Soc. Symp. Proc. 100, 331 (1988)Google Scholar
[13] Trommer, R., Müller, H., Cardona, M., and Vogl, P., Phys. Rev. B 21,4869 (1980)Google Scholar
[14] Nakamura, T., Ushirokawa, A., and Katoda, T., Appl. Phys. Lett. 38, 13 (1981)Google Scholar