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NH4F Pre-Cleaning of Silicon (100) for UHV-CVD Epitaxy

Published online by Cambridge University Press:  25 February 2011

Susan L. Cohen ,
Joseph Blum ,
Christopher D'Emic ,
Monica Gilbert ,
Frank Cardone ,
Carol Stanis  and
Michael Liehr
Susan L. Cohen
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Joseph Blum
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Christopher D'Emic
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Monica Gilbert
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Frank Cardone
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Carol Stanis
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
Michael Liehr
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

NH4F etching of Si(100) surfaces has been evaluated as a pre-clean for UHV-CVD low temperature epitaxy of silicon. A combination of surface science and epitaxial growth experiments have found that while the NH4F treatment provides surfaces which have less carbon, oxygen and fluorine impurities than a standard dilute HF pre-clean, there is a significant density of crystallographic defects in the epitaxial films which limits the usefulness of this approach.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 499
Copyright
Copyright © Materials Research Society 1992

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References

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