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New Surface Cleaning Method for Heavily-Doped Silicon and Its Application to Selective Cvd-W Clad Layer Formation on Single- and Poly-Crystalline Silicon

Published online by Cambridge University Press:  15 February 2011

T. Kosugi ,
Y Sato ,
H. Ishii  and
Y Arita
T. Kosugi
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
Y Sato
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
H. Ishii
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
Y Arita
Affiliation:
NTT LSI Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-01
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Abstract

We have developed a new method of cleaning p+-Si surfaces by plasma hydrogenation and subsequent HF treatment prior to selective W-CVD by SiH4 reduction. The hydrogenation enhances the hydrogen-termination of p+-Si surfaces in HF solution significantly, resulting in high controllability in selective W-CVD on p+-Si surfaces. Contact resistivity was 0.5 to 3×10-7 Ω cm2 for single- and poly-crystalline p+-Si. The increase in junction leakage current was fairly small because of low Si consumption.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 303
Copyright
Copyright © Materials Research Society 1996

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References

[1] Sato, Y and Maeda, M., Jpn. J. Appl. Phys. 33, 6508 (1994).Google Scholar
[2] Kosugi, T., Ishii, H., and Arita, Y, J. Appl. Phys. (to be submitted).Google Scholar
[3] Gates, S. M., Kunz, R. R., and Greenlief, C. M., Surf. Sci. 207, 364 (1989).Google Scholar