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Molecular Dynamics Simulations of Ionized Cluster Beam Deposition

Published online by Cambridge University Press:  25 February 2011

Horngming Hsieh ,
R.S. Averback  and
R. Benedek
Horngming Hsieh
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL. 61801
R.S. Averback
Affiliation:
Materials Science Division, Argonne National Laboratory, Argonne, IL. 60439
R. Benedek
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL. 61801
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Abstract

Fully dynamical computer simulations have been used to study the physical mechanisms of ionized cluster beam deposition. Clusters containing 92 atoms were directed at <001> surfaces with energies per cluster atom ranging from one sixth to three times the cohesive energy of the target. Simulation events employed either Lennard-Jones or Embedded Atom Method potentials. The atoms in the cluster appear to undergo local melting on impact with the substrate. Higher cluster energy increases the spreading of cluster atoms on the substrate and improves epitaxy, but it also increases interdiffusion and produces point defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 283
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCES

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