Hostname: page-component-55f67697df-twqc4 Total loading time: 0 Render date: 2025-05-08T22:25:40.771Z Has data issue: false hasContentIssue false
  • English
  • Français

Microscale Radiation Effects in Multilayer Thin-Film Structures During Rapid Thermal Processing

Published online by Cambridge University Press:  21 February 2011

Peter Y. Wong ,
Christopher K. Hess  and
Ioannis N. Miaoulis
Peter Y. Wong
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA. 02155
Christopher K. Hess
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA. 02155
Ioannis N. Miaoulis*
Affiliation:
Thermal Analysis of Materials Processing Laboratory, Mechanical Engineering Department, Tufts University, Medford, MA. 02155
*
*Author to whom all correspondence should be sent
Get access

Abstract

The individual film thicknesses of multilayered structures processed by rapid thermal processing are of the same order as the wavelengths of the incident radiation. This induces optical interference effects which are responsible for the strong dependency of surface reflectivity, emissivity, and temperature distributions on the geometry of the layering structures, presence of patterns, and thickness of the films. A two-dimensional, finitedifference numerical model has been developed to investigate this microscale radiation phenomena and identify the critical processing parameters which affect rapid thermal processing of multilayer thin films. The uniformity of temperature distributions throughout the wafer during rapid thermal processing is directly affected by incident heater configurations, ramping conditions, wafer-edge effects, and thin-film layering structure. Results from the numerical model for various film structures are presented for chemical vapor deposition of polycrystalline silicon over oxide films on substrate. A novel technique using an edge-enhanced wafer which has a different film structure near its edge is presented as a control over the transient temperature distribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 217
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Lord, H.A., IEEE Trans. Semicond. Manuf., 1 (3), 105 (1988).Google Scholar
2. Deaton, R. and Massoud, H.Z., IEEE Trans. Semicond. Manuf., 5 (4), 347 (1992).CrossRefGoogle Scholar
3. Öztürk, M.C. et al. , IEEE Trans. Semicond. Manuf., 4 (2), 155 (1991).Google Scholar
4. Singh, R., J. Appl. Phys., 63 (8), R59 (1988).Google Scholar
5. Campbell, S.A. and Knutson, K.L., IEEE Trans. Semicond. Manuf., 5 (4), 302 (1992).Google Scholar
6. Gyurcsik, R.S., Riley, T.J., and Sorrell, F.Y., IEEE Trans. Semicond. Manuf., 4 (1), 9 (1991).Google Scholar
7. Apte, P.P. and Saraswat, K.C., IEEE Trans. Semicond. Manuf., 5 (3), 180 (1992).CrossRefGoogle Scholar
8. Sato, T., Jap. J. Appl. Phys., 6 (3), 339 (1967).Google Scholar
9. Sturm, J.C. and Reaves, C.M., IEEE Trans. Electron Dev., 39 (1), 81 (1992).Google Scholar
10. Sorrell, F.Y., Harris, J.A., and Gyurcsik, R.S., IEEE Trans. Semicond. Manuf., 3 (4), 183 (1990).Google Scholar
11. Sorrell, F.Y. et al. , IEEE Trans. Electron Dev., 39 (1), 75 (1992).Google Scholar
12. Ozttirk, M.C. et al. , in Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing, edited by Hodul, D., Gelpey, J.C., Green, M.L., and Seidel, T.E. (Mat. Res. Soc. Proc. 146, Pittsburgh, PA, 1989) pp. 109.Google Scholar
13. Meyer, J.R., Kruer, M.R., and Bartoli, F.J., J. Appl. Phys., 51 (10), 5513 (1980).Google Scholar
14. Wong, P.Y., Hess, C.K., and Miaoulis, I.N., Int. J. Heat Mass Transfer, 35 (12), 3313 (1992).Google Scholar
15. Jellison, G.E. Jr., and Burke, H.H., J. Appl. Phys., 60 (2), 841 (1986).Google Scholar