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A Method for Rapid Thermal Annealing of Compound Semiconductors by Cw CO2 Laser Irradiation

Published online by Cambridge University Press:  28 February 2011

U. Neta ,
V. Richter  and
R. Kalish
U. Neta
Affiliation:
Solid State Institute Technion-Israel Institute of TechnologyHAIFA ISRAEL 32000
V. Richter
Affiliation:
Solid State Institute Technion-Israel Institute of TechnologyHAIFA ISRAEL 32000
R. Kalish
Affiliation:
Solid State Institute Technion-Israel Institute of TechnologyHAIFA ISRAEL 32000
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Abstract

A new Rapid Thermal Processing technique based on heating by irradiation from CO2 laser is presented. It is particularly suitable for thermal treatment of low melting temperature materials such as annealing implantation induced damage in compound semiconductors.

Short time heating of the sample is achieved by its contact with a quartz plate heated by photons from a CW CO2 laser. The quartz serves both as an absorbing medium for the radiation and as a proximity cap. Steady state temperature can be obtained by the simultaneous heating of the sample by the laser and its cooling by a jet of N2 gas.

The present technique, when applied to ion implanted InSb (TA<450°C, t=10 seconds), leads to removal of the implantation damage which is comparable to that obtained by furnace or flash lamp (Heatpulse™)annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 273
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Poate, J.M., and Mayer, J.W., “Laser and Electron Beam Processing of Semiconductor Structures” (Academic Press, New York, 1982).Google Scholar
2. Narayan, J. and Holland, O. W., J. Appl. Phys. 56 (10), 2913 (1984).Google Scholar
3. Uzan, C., Marfaing, Y., Kalish, R. and Richter, V. “Properties of In and Ar implanted Hgo. 3Cdo. 7Te Following Furnace and Rapid Thermal Annealing” (to be published in J. Appl. Phys.)Google Scholar
4. Uzan, C., Kalish, R., Richter, V. and Nquen, T. Duy, SPIE Vol.659, Materials Technologies for IR Detectors (1986) p. 81.Google Scholar
5. Bahir, G. and Kalish, R., J. Appl. Phys. 54, 3129 (1983).Google Scholar
6. Bahir, G., Kalish, R. and Nemirovski, Y., Appl Phys. Lett. 41, 1057 (1982).Google Scholar
7. Kalish, R. and Bahir, G., J. of Cryst. Growth 72, 474 (1985).Google Scholar
8. Feldman, J. C. and Rodgers, J. W. J. Appl. Phys. 41, 3776 (1970).Google Scholar