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Mechanism Of Defect Reactions In Semiconductors

Published online by Cambridge University Press:  15 February 2011

Yuzo Shinozuka
Yuzo Shinozuka*
Affiliation:
Department of Applied Science, Faculty of Engineering, Yamaguchi University Tokiwadai 2557, Ube 755, [email protected]
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Abstract

An overview is presented on mechanisms of electronically induced (enhanced) defect reactions in semiconductors, which are classified into the local heating, the structural instability, and the recombination enhanced. A mechanism for the annihilation of a hydrogen-carbon complex in silicon is given as an example of the second one. The last two mechanisms can be treated in a unified scheme by using the correct configuration coordinate diagram, which enable us to treat correctly the correlation in successive captures of an electron and a hole. The energy conversion mechanism during the reaction is precisely discussed paying attention to the relation between the lattice relaxation mode and the symmetry breaking reaction coordinate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 225
Copyright
Copyright © Materials Research Society 1997

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