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Low-Temperature Epitaxial Growth of IN-Situ HeavilY B-Doped Si1-xGex, Films Using Ultraclean LPCVD

Published online by Cambridge University Press:  10 February 2011

A. Morrya ,
M. Sakuraba ,
T. Matsuura ,
J. Murota ,
I. Kawashima  and
N. Yabumoto
A. Morrya
Affiliation:
Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University, Sendai 980-8577, Japan, [email protected]
M. Sakuraba
Affiliation:
Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University, Sendai 980-8577, Japan, [email protected]
T. Matsuura
Affiliation:
Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University, Sendai 980-8577, Japan, [email protected]
J. Murota
Affiliation:
Laboratory for Electronic Intelligent Systems, RIEC, Tohoku University, Sendai 980-8577, Japan, [email protected]
I. Kawashima
Affiliation:
Atsugi Material Analysis Center, NIT Advanced Technology Corp., Atsugi 243-0124, Japan
N. Yabumoto
Affiliation:
Atsugi Material Analysis Center, NIT Advanced Technology Corp., Atsugi 243-0124, Japan
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Abstract

In-situ heavy doping of B into Si1-xGex epitaxial films on the Si(100) substrate have been investigated at 550°C in a SiH4(6.0Pa)-GeH4(0.1−6.0Pa)-B2H6(1.25 ×10−5−3.75 × 10−2Pa)-H2(17–24Pa) gas mixture by using an ultraclean hot-wall low-pressure CVD system. The deposition rate increased with increasing GeH4 partial pressure, and it decreased with increasing B2H6 partial pressure only at the higher GeH4 partial pressure. As the B2H6 partial pressure increased, the Ge fraction scarcely changed although the lattice constant of the film decreased. These characteristics can be explained by the suppression of both the SiH4 and GeH4 adsorption/reactions in a similar degree due to B2H6 adsorption on the Si-Ge and/or Ge-Ge bond sites. The B concentration in the film increased proportionally up to 1022cm3 with increasing B2H6 partial pressure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 349
Copyright
Copyright © Materials Research Society 1998

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References

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