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Low Temperature UV Growth of SiO2 in O2 and N2O

Published online by Cambridge University Press:  25 February 2011

Asghar Kazor  and
Ian W. Boyd
Asghar Kazor
Affiliation:
Electronic & Electrical EngineeringUNIVERSITY COLLEGE LONDONTorrington Place, London WC1E 7JE, UK
Ian W. Boyd
Affiliation:
Electronic & Electrical EngineeringUNIVERSITY COLLEGE LONDONTorrington Place, London WC1E 7JE, UK
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Abstract

We report here the use of a low pressure Hg lamp to grow oxide layers on Si in N 2O and O2. Layer thicknesses up to 100Å, whose IR absorption characteristics are similar to those exhibited by thermal oxides, have been produced. Preliminary modelling of the process is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 371
Copyright
Copyright © Materials Research Society 1992

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