Hostname: page-component-55f67697df-zpzq9 Total loading time: 0 Render date: 2025-05-10T01:09:37.097Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Interface State Density at Pseudomorphic ZnSe/Epitaxial GaAs Interface

Published online by Cambridge University Press:  28 February 2011

Q.-D. Qian ,
J. Qiu ,
M. Kobayashi ,
R.L. Gunshor ,
L.A. Kolodziejski ,
M.R. Melloch ,
J.A. Cooper ,
J.M. Gonsalves  and
N. Otsuka
Q.-D. Qian
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J. Qiu
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
M. Kobayashi
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
R.L. Gunshor
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
M.R. Melloch
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J.A. Cooper
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
J.M. Gonsalves
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
N. Otsuka
Affiliation:
Purdue University, West Lafayette, Indiana, 47907, USA
Get access

Abstract

The electrical properties of pseudomorphic ZnSe/epilayer GaAs heterointerfaces, grown by MBE, have been investigated by capacitance versus voltage (C-V) and current versus voltage (I- V) measurements. Hole accumulation and inversion were observed in ZnSe/p-GaAs interfaces and ZnSe/n-GaAs interfaces, respectively. The C-V characteristics of the Au/ZnSe/p-GaAs capacitors are nearly ideal, exhibiting an interface state density (2.5x1011cm-2) which compares favorably with the densities reported at AlGaAs/GaAs interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 423
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1. Physics and Chemistry of III-V Compound Semiconductor Interfaces, Wilson, Carl W, ed. Plenum Press, New York, 1985 Google Scholar
2. Gunshor, R.L., Kolodziejski, L.A., Melloch, M.R., Vaziri, M., Choi, C., and Otsuka, N., Appl. Phys. Lett. 50 200 (1987)Google Scholar
3. Kolodziejski, L.A., Gunshor, R.L., Melloch, M.R., Vaziri, M., Choi, C., and Otsuka, N., Proceeding of SPIE VO1.796 Growth of Compound Semiconductors, Gunshor, R.L. and Morkog, H., eds., 98 (1987)Google Scholar
4. Studmann, G.D., Gunshor, R.L., Kolodziejski, L.A., Melloch, M.R., Cooper, J.A. Jr, Pierret, R.F., Munich, D.P., Choi, C., and Otsuka, N., Appl. Phys. Lett. 52 1249 (1988)Google Scholar
5. Lee, Y.R., Ramdas, A.K., Kolodziejski, L.A., and Gunshor, R.L., Phys. Rev. B, 38 13143 (1988)Google Scholar
6. Chung, S.K., Wu, Y., Wang, K.L., Sheng, N.H., Lee, C.P., and Miller, D.L., IEEE Trans. Electron Devices, ED–34 149 (1987)Google Scholar
7. Nicollian, E.H., and Goetzberger, A., IEEE Trans. Electron Device, ED–12, 108 (1965)Google Scholar