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Low Energy Ion Irradiation Effect on Electron Transport in Gaas/Algaas Heterostructures

Published online by Cambridge University Press:  21 February 2011

J. Yanagisawa ,
A. Nozawa ,
Y. Yuba ,
S. Takaoka ,
K. Murase  and
K. Gamo
J. Yanagisawa
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
A. Nozawa
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Y. Yuba
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
S. Takaoka
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan
K. Murase
Affiliation:
Department of Physics, Faculty of Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
K. Gamo
Affiliation:
Department of Electrical Engineering, Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, Japan
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Abstract

Effects of low energy ion beam induced damages on transport properties of a two-dimensional electron gas (2DEG) system in GaAs/AlGaAs heterostructures have been investigated. 1 keV Ar ions were irradiated on the sample surface at several ion doses (1011 - 1013 cm-2). Carrier density and electron mobility of the 2DEG formed at about 90 nm below the GaAs/AlGaAs heterostructure surface were estimated at 1.5 K by Hall resistance and longitudinal resistance measurements before and after annealing at 400°C for 10 min in an Ar gas ambient. The temperature dependence of those values was also measured for as-grown and for 1013 cm-2 ion irradiated and subsequently annealed samples. Typical results show that carrier density and mobility are not degraded severely by Ar ion irradiation at doses of 1013 cm-2 and suggest the possibility to fabricate buried structures in GaAs/AlGaAs heterostructures using low energy Si focused ion beam (FIB) irradiation and subsequent in situ overlayer growth by MBE.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 165
Copyright
Copyright © Materials Research Society 1995

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References

1 Takamori, A., Miyauchi, E., Arimoto, H., Bamba, Y. and Hashimoto, H., Jpn. J. Appl. Phys. 23, L599 (1984).Google Scholar
2 Kawano, A., Arimoto, H., Kitada, H., Endoh, A. and Fujii, T., Jpn. J. Appl. Phys. 30, L71 (1991).Google Scholar
3 Thompson, J. H., Ritchie, D. A., Jones, G. A. C., Linfield, E. H., Frost, J. E. F., Churchill, A. C., Smith, G. W., Lee, D., Houlton, M. and Whitehouse, C. R., Surface Sei. 267, 69 (1992).Google Scholar
4 Linfield, E. H., Jones, G. A. C., Ritchie, D. A., Hamilton, A. R. and lredale, N., J. Crystal Growth 127, 41 (1993).Google Scholar
5 Ishibashi, T., Fischer, A., Wiech, A. D. and Ploog, K., Appl. Phys. Lett. 62, 513 (1993).Google Scholar
6 Itoh, M., Saku, T., Fujisawa, T., Hirayama, Y. and Tarucha, S., Jpn. J. Appl. Phys. 33, 771 (1994).Google Scholar
7 Yamazawa, M., Matsumoto, T., Taniguchi, H., Sakamoto, T., Takagaki, Y., Yuba, Y., Takaoka, S., Gamo, K., Murase, K. and Namba, S., Jpn. J. Appl. Phys. 30, 3261 (1991).Google Scholar
8 Takahara, J., Ochiai, Y., Matsui, S., Takaoka, S., Murase, K. and Gamo, K., to be published in Jpn. J. Appl. Phys.Google Scholar
9 Walukiewicz, W., Ruda, H. E., Lagowski, J. and Gatos, H. C., Phys. Rev. B, 30, 4571 (1984).Google Scholar
10 Stoffel, N. G., J. Vac. Sei. Technol. B, 10, 651 (1992).Google Scholar
11 Saku, T., Hirayama, Y. and Horikoshi, Y., Jpn. J. Appl. Phys. 30, 902 (1991).Google Scholar