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Localized Crystallinity Measurement of Single-Crystal Ge on Insulator by Raman Polarization

Published online by Cambridge University Press:  28 February 2011

K. Kato  and
M. Takai
K. Kato
Affiliation:
Central Research Laboratory, Glory Ltd., Himeji, Hyogo 670, JAPAN
M. Takai
Affiliation:
Faculty of Engineering Science and Research Center for Extreme Materials, Osaka University, Toyonaka, Osaka 560, JAPAN
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Abstract

Agglomeration has occurred during zone-melting to obtain single-crystal germanium layers because of insufficient wettability between germanium and silicon-dioxide. The agglomeration could be suppressed by controlling the capping layer thickness, germanium layer thickness, and the island shape. A rotation of crystal orientation was found in the stripe shape island, which was presumably caused by the stress relieving within an island.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 235: Symposium A – Phase Formation and Modification by Beam-Solid Interactions , 1991 , 145
Copyright
Copyright © Materials Research Society 1992

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References

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