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Laser Induced Solid-State Grain Growth in Polysilicon Films

Published online by Cambridge University Press:  25 February 2011

S.A. Ajuria
S.A. Ajuria*
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

We report studies done on the heating of polysillcon thin films below the melting temperature with long-time (on the order of minutes) continuous-wave laser irradiations. It is shown that a well controlled steady-state temperature is locally established within the film. A thermal model is developed to correlate film temperature to beam intensity and a direct relationship is found. A correlation coefficient of 2.5 K/W/cm2 is empirically determined between film temperature and incident beam power density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 383
Copyright
Copyright © Materials Research Society 1990

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References

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