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Ion Beam Synthesis of Silicon Carbide : Infra-Red and RBS Studies

Published online by Cambridge University Press:  21 February 2011

L. Simon ,
A. Mesu ,
J. J. Grob ,
T. Heiser  and
J. L. Balladore
L. Simon
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
A. Mesu
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J. J. Grob
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
T. Heiser
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
J. L. Balladore
Affiliation:
CNRS, Laboratoire PHASE (UPR 292-CNRS), BP 20, 67037 Strasbourg Cedex 2, France
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Abstract

We report on p-SiC thin layer synthesis by carbon ion implantation at high temperature. Infra-red and RBS analysis were performed on samples implanted at temperatures ranging from 200 to 900°C and for carbon doses varying in the range 1017to2.1018 cm . RBS analysis does not reveal any diffusion or segregation of carbon up to 900°C. At this temperature we obtained the optimum Infra-red signature. The (3-SiC formation is shown to be a thermally activated process with an energy of 0.1 eV leading us to speculate that the diffusion of point defects could be the limiting factor of the process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 354: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization , 1994 , 231
Copyright
Copyright © Materials Research Society 1995

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