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Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Growth Conditions of GaN Buffer Layers

Published online by Cambridge University Press:  10 January 2012

Yoshitaka Nakano ,
Yoshihiro Irokawa ,
Yasunobu Sumida ,
Shuichi Yagi  and
Hiroji Kawai
Yoshitaka Nakano
Affiliation:
Chubu University, Kasugai, Aichi 487-8501, Japan
Yoshihiro Irokawa
Affiliation:
National Institute of Materials Science, Tsukuba, Ibaraki 305-0044, Japan
Yasunobu Sumida
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
Shuichi Yagi
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
Hiroji Kawai
Affiliation:
POWDEC, Oyama, Tochigi 323-0028, Japan
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Abstract

We have investigated electronic band-gap states in AlGaN/GaN hetero-structures with different growth conditions of GaN buffer layers from a viewpoint of Carbon impurity incorporation into GaN, using photoluminescence (PL), capacitance-voltage (C-V) and steady-state photo-capacitance spectroscopy (SSPC) techniques. The Carbon incorporation was found to be enhanced with decreasing the growth temperature of the GaN buffer layer between 1120 and 1170 °C. Acting in concert, three specific deep levels located at ~2.07, ~2.70, and ~3.23 eV below the conduction band were found to become dense significantly at the low growth temperature. Therefore, these levels are probably attributable to Ga vacancies and/or Carbon acceptors produced by the Carbon impurity incorporation, and are likely in conjunction with each other.

Keywords

nitrideIII-Velectronic material
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1396: Symposium O – Compound Semiconductors for Generating, Emitting and Manipulating Energy , 2012 , mrsf11-1396-o07-37
Copyright
Copyright © Materials Research Society 2012

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References

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