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Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy

Published online by Cambridge University Press:  28 February 2011

Henry P. Lee ,
Xiaoming Lius ,
Shyh Wang ,
Thomas George ,
Eicke R. Weber  and
Zuzanna Liliental-Weber
Henry P. Lee
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA. 94720
Xiaoming Lius
Affiliation:
on leave from Tsinghua University, Beijing China
Shyh Wang
Affiliation:
Department of Electrical Engineering and Computer Sciences University of California, Berkeley, CA. 94720
Thomas George
Affiliation:
Department of Materials Science and Mineral Engineering University of Calfornia, Berkeley, CA. 94720
Eicke R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering University of Calfornia, Berkeley, CA. 94720
Zuzanna Liliental-Weber
Affiliation:
Center for Advanced Materials and, Material and Chemical Sciences Division, Lawrence Berkeley Laboratory University of California, Berkeley, CA 94720
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Abstract

Nominal 100 Å and 150 Å thick GaAs layers were deposited on Si substrates by a modulated molecular beam technique and normal molecular beam epitaxy (MBE) at 300 °C and 375 °C respectively for plan view and cross-sectional transmission electron microscopy (TEM) examinations. From coverage of Moire fringes, it is found that the nucleated GaAs films grown by the modulated molecular beam technique were thinner, streaker and more two-dimensional than the MBE grown films. The same modulated molecular beam technique was also used for the deposition of the initial buffer layer of 3µm thick GaAs on Si films. Results from the 77k photoluminescence(PL) and double crystal X ray diffraction measurements showed that these films have superior optical and structural quality compared to similar films grown by normal two-step MBE. The improvement is attributed to a more two-dimensional nucleation of GaAs films associated with the modulated molecular beam growth technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 357
Copyright
Copyright © Materials Research Society 1989

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