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Improvement of Minority-Carrier Properties of GaAs on Si

Published online by Cambridge University Press:  28 February 2011

S.M. Vernon ,
R.K. Ahrenkiel ,
M.M. Al-Jassim ,
T.M. Dixon ,
K.M. Jones ,
S.P. Tobin  and
N.H. Karam
S.M. Vernon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
R.K. Ahrenkiel
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
M.M. Al-Jassim
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
T.M. Dixon
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
K.M. Jones
Affiliation:
Solar Energy Research Institute, 1617 Cole Blvd., Golden, CO 80401
S.P. Tobin
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
N.H. Karam
Affiliation:
Spire Corporation, Patriots Park, Bedford, MA 01730
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Abstract

GaAs-on-Si structures have been grown by atmospheric-pressure metalorganic chemical vapor deposition (MOCVD); in some samples, the GaAs nucleation layer was deposited by atomic layer epitaxy (ALE). Material quality has been characterized by Nomarski microscopy, time-resolved photoluminescence, trans- mission electron microscopy, and the performance of photovoltaic devices. The minority-carrier lifetime has been correlated with defect density and growth parameters. The use of a thermal-cycle-growth technique is seen to be a major factor in improving GaAs-on-Si material quality without resorting to the use of thick buffer layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 349
Copyright
Copyright © Materials Research Society 1989

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References

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