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Hydrogen-Plasma Reactive Flushing for a-Si:H P-I-N Solar Cell Fabrication

Published online by Cambridge University Press:  25 February 2011

Y. S. Tsuo ,
Y. Xu ,
Richard S. Crandall ,
H. S. Ullal  and
K. Emery
Y. S. Tsuo
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
Y. Xu
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
Richard S. Crandall
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
H. S. Ullal
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
K. Emery
Affiliation:
Solar Energy Research Institute, Golden, Colorado 80401
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Abstract

We have studied the effects of a hydrogen-plasma reactive flush between the pand i-layer depositions in fabricating solar cells of glass/TCO/p(a-SiC:H)-i(a-Si:H)-n(a-Si:H)/metal in a single-chamber, glow-discharge deposition system. Spectral response, photoluminescence, and photovoltaic conversion efficiency measurements show that the hydrogen-plasma reactive flush is effective in reducing the p-i interface recombination of charge carriers and in improving solar cell performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 471
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Rajeswaran, G., Vanier, P.E., Corderman, R.R., and Kampas, F.J. in Proceedings of the 18th IEEE Photovoltaics Specialists Conference (IEEE, 1985) pp. 1271–1276.Google Scholar
2. Collins, R.W., Appl. Phys. Lett. 53, 1086 (1988).CrossRefGoogle Scholar
3. Kuwano, Y. and Ohnishi, M., J. Phys. (Paris) Colloq. 42, C4–1155 (1981).Google Scholar
4. Catalano, A. and Wood, G. in Amorphous Silicon Technology, edited by Madan, A., Thompson, M.J., Taylor, P.C., LeComber, P.G., and Hamakawa, Y. (Mater. Res. Soc. Proc. 118, Pittsburgh, PA 1988) pp. 581–586.Google Scholar
5. Arya, R.R., Catalano, A., and Oswald, R.S., Appl. Phys. Lett. 49, 1089 (1986).Google Scholar
6. Tsuo, Y.S., Deng, X.J., Smith, E.B., Xu, Y., and Deb, S.K., J. Appl. Phys. 64, 1604 (1988).Google Scholar
7. Deng, X.J., Tsuo, Y.S., and Trefny, J.U. in Proceedings of the Industrial-University Advanced Materials Conference, March 6–9, 1989, Denver, Colorado, to be published.Google Scholar
8. Tsuo, Y.S., Weil, R., Asher, S., Nelson, A., Xu, Y., and Tsu, R. in Proceedings of the 19th IEEE Photovoltaics Specialists Conference (IEEE, 1987) pp. 705–708.Google Scholar
9. Sakata, I. and Hayashi, Y., Appl. Phys. A 39, 277 (1986).CrossRefGoogle Scholar
10. Street, R.A. in Semiconductors and Semimetals, Vol.21B, ed. by Pankove, J.I. (Academic Press, Inc. 1984) pp. 197–244.Google Scholar