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Higher Order Nonlinear Dielectric Microscopy

Published online by Cambridge University Press:  17 March 2011

Yasuo Cho  and
Koya Ohara
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
Koya Ohara
Affiliation:
Research Institute of Electrical Communication, Tohoku University 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Abstract

A higher order nonlinear dielectric microscopy technique with higher lateral and depth resolution than conventional nonlinear dielectric imaging is investigated. The proposed technique involves the measurement of higher order nonlinear dielectric constants, with a depth resolution of down to 1.5 nm. The technique is demonstrated to be very useful for observing surface layers of the order of unit cell thickness on ferroelectric materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 688: Symposium C – Ferroelectric Thin Films X , 2001 , C9.9.1
Copyright
Copyright © Materials Research Society 2002

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References

1. Cho, Y., Kirihara, A., and Saeki, T., Denshi Joho Tsushin Gakkai Ronbunshi 78–c–1, 593 (1995) [in Japanese].Google Scholar
2. Cho, Y., Kazuta, S. and Matsuura, K.: Appl.Phys. Letters, 75, 2833 (1999).Google Scholar
3. Odagawa, H. and Cho, Y.: Surface Science, 463, L621 (2000).Google Scholar
4. Odagawa, H. and Cho, Y.: Jpn. J. of Appl. Phys., 39, 5719 (2000).Google Scholar
5. Cho, Y., Atsumi, S. and Nakamura, K.: Jpn. J. Appl. Phys., 36, 3152 (1997).Google Scholar
6. Cho, Y., Kazuta, S., Ohara, K. and Odagawa, H.: Jpn. J. Appl. Phys., 39, 3086 (2000).Google Scholar