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High-Endurance Scalable PZT Capacitors Using Thin SRO/Pt Stacked Electrodes

Published online by Cambridge University Press:  10 February 2011

K Yamakawa ,
O. Arisumi ,
O. Hidaka ,
T. Morimoto ,
I. Kunishima ,
S. Tanaka  and
T. Arikado
K Yamakawa
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
O. Arisumi
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
O. Hidaka
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
T. Morimoto
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
I. Kunishima
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
S. Tanaka
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
T. Arikado
Affiliation:
Microelectronics Engineering Lab., Semiconductor Company, Toshiba Corp. 8, Shinsugita, Isogo, Yokohama 235–8522, Japan
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Abstract

90nm-thick PZT capacitors using Pt/thinSRO stacked electrodes showed 2V operation capability, no remanence degradation after more than 1E10 switching cycles, and low imprint. Effects of SRO(SrRuO3) electrode have been studied for high-endurance PZT capacitors. In capacitors with only top SRO electrodes, the SRO increased polarization and improved saturation property compared to Pt electrode PZTs. Fatigue and imprint degradation was caused by Pt bottom electrode interface deterioration. It is thought that the oxygen vacancies created with Pb vacancies are important respecting endurance and retention. PZT films crystallized on SRO showed smaller coercive voltage Vc (2/3 of that for PZT/Pt) with random orientation. The SRO layers block Pb diffusion and supply oxygen, thereby resulting in less oxygen vacancy accumulation at PZT interfaces. We have improved the imprint property by the reduction of thermal budget in SRO/PZT/SRO structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 247
Copyright
Copyright © Materials Research Society 2000

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References

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