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High Pressure Study of III-Nitrides and Related Heterostructures

Published online by Cambridge University Press:  10 February 2011

W. Shan ,
J. W. Ager III ,
W. Walukiewicz ,
E. E. Haller ,
B. D. Little ,
J. J. Song ,
B. Goldenberg ,
Z. C. Feng ,
M. Schurman  and
R. A. Stall
W. Shan
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. W. Ager III
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
W. Walukiewicz
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E. E. Haller
Affiliation:
Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, CA 94720
B. D. Little
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
J. J. Song
Affiliation:
Center for Laser and Photonics Research and Department of Physics, Oklahoma State University, Stillwater, Oklahoma 74078
B. Goldenberg
Affiliation:
Honeywell Technology Center, Plymouth, Minnesota 55420
Z. C. Feng
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
M. Schurman
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
R. A. Stall
Affiliation:
EMCORE Corporation, 394 Elizabeth Avenue, Somerset, NJ 08873
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Abstract

We present results of photoluminescence (PL) studies of GaN, InxGa1-xN and AlxGa1-xN alloys, as well as related thin film heterostructures under hydrostatic pressure using the diamond-anvil-cell technique. The GaN PL spectra are dominated by strong and sharp near-band-edge luminescence associated with annihilations of bound excitons and intrinsic free excitons in the crystals. The spectrally well-resolved emission lines allow us to accurately determine their pressure. The PL spectra of InxGa1-xN and AlxGa1-xN epitaxial films were found to exhibit strong near-band-edge luminescence emissions. By examining the pressure dependence of these spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of InxGa1-xN and AlxGa1-xN were determined for the first time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 499: Symposium DD – High Pressure Materials Research , 1997 , 361
Copyright
Copyright © Materials Research Society 1998

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