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Heteroepitaxial Layer Morphology and Misfit Defect Formation

Published online by Cambridge University Press:  21 February 2011

A.G. Cullis
A.G. Cullis*
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
*
*A.G. Cullis is now at: Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD, UK
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Abstract

The manner in which misfit strain can influence the morphology of heteroepitaxial layers is reviewed. Following a brief consideration of theoretical modelling, examples of experimental observations for two important materials systems, SiGe/Si and InGaAs/GaAs, are given. It is demonstrated that the formation of undulations of specific types is driven by partial elastic stress-relief and a lowering of the system free energy. Under these conditions, islands of deposit can be formed during initial growth and ripples can be produced upon continuous layers. Furthermore, the presence of surface morphological distortions and the accompanying strain fluctuations also can have a significant impact upon misfit dislocation introduction. Relationships between these fluctuations and dislocation source behaviour are described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 303
Copyright
Copyright © Materials Research Society 1996

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References

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