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Growth of Buried CoSi2 Layers in Si(100) by Molecular Beam Allotaxy

Published online by Cambridge University Press:  03 September 2012

S. Mantl ,
H.L. Bay ,
I. Michel ,
S. Mesters  and
H. Trinkaus
S. Mantl
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich GmbH, D-52425 Jülich, Germany
H.L. Bay
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich GmbH, D-52425 Jülich, Germany
I. Michel
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich GmbH, D-52425 Jülich, Germany
S. Mesters
Affiliation:
Institut für Schicht- und Ionentechnik, KFA Jülich GmbH, D-52425 Jülich, Germany
H. Trinkaus
Affiliation:
Institut für Festkörperforschung
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Abstract

Buried single crystalline CoSi2 layers in Si(100) have been grown using molecular beam allotaxy. In this paper, we investigated the diffusive interaction of two buried silicide precipitate layers, one with a small Co peak concentration of 10 at% and another one with 26 at%. Annealing causes first local coarsening in each layer, and then dissolution of the thinner precipitate layer. The accumulation of the Co atoms at the thicker layer is described by a simple model for the diffusional redistribution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 320: Symposium D – Silicides, Germanides, and Their Interfaces , 1993 , 447
Copyright
Copyright © Materials Research Society 1994

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References

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