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Giant Magnetoresistance of Self-Assembled ErAs Islands in GaAs

Published online by Cambridge University Press:  10 February 2011

D.R. Schmidt ,
J.P. Ibbetson ,
D.E. Brehmer ,
C.J. Palmstrøm  and
S.J. Allen
D.R. Schmidt
Affiliation:
Physics Department, University of California, Santa Barbara, CA 93106
J.P. Ibbetson
Affiliation:
Materials Department, University of California, Santa Barbara, CA 93106
D.E. Brehmer
Affiliation:
Physics Department, University of California, Santa Barbara, CA 93106
C.J. Palmstrøm
Affiliation:
Chemical Engineering and Materials Science, University of Minnesota, MN 55455
S.J. Allen
Affiliation:
Physics Department, University of California, Santa Barbara, CA 93106
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Abstract

We have integrated nanometer-sized ErAs islands in GaAs, resulting in a nano-composite of paramagnetic particles in a semiconductor. Negative giant magnetoresistance of up to four orders of magnitude is observed at low temperatures. We can control the density and size of the ErAs islands, making this an ideal system to investigate transport in magnetic nano-structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 475: Symposium M – Magnetic Ultrathin Films, Multilayers, and Surfaces – 1997 , 1997 , 251
Copyright
Copyright © Materials Research Society 1997

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References

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