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The Formation and Morphology of Stress Induced Voids in Thin Narrow Aluminum Lines

Published online by Cambridge University Press:  25 February 2011

C. A. Paszkiet ,
M. A. Korhonen  and
Che-Yu Li
C. A. Paszkiet
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
M. A. Korhonen
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
Che-Yu Li
Affiliation:
Department of Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, New York 14853
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Abstract

Thin, narrow, lines were reactive ion etched from a highly textured aluminum film deposited on (100) silicon substrates; some arrays of lines were covered with a passivation layer of silicon nitride. Passivated and unpassivated lines were heat treated at 400°C.

Voids were present in nitride covered lines which were aged for over three months at room temperature as well as in nitride covered lines examined immediately after heat treatment. Voids were not visible in bare, heat treated lines. Void nucleation occurred at the points of intersection of grain boundaries with line edges and growth appeared to follow grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 381
Copyright
Copyright © Materials Research Society 1991

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References

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