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Extreme Service Packaging for Silicon Carbide Electronic Devices

Published online by Cambridge University Press:  15 March 2011

Maxime J. F. Guinel ,
Diego Rodriguez-Marek ,
M. Grant Norton ,
Robert B. Davis  and
David F. Bahr
Maxime J. F. Guinel
Affiliation:
School of MME, Washington State University, Pullman WA 99164
Diego Rodriguez-Marek
Affiliation:
School of MME, Washington State University, Pullman WA 99164
M. Grant Norton
Affiliation:
School of MME, Washington State University, Pullman WA 99164
Robert B. Davis
Affiliation:
Caldus Semiconductor, Inc. 350 Hills Street, Richland, WA 99352
David F. Bahr
Affiliation:
School of MME, Washington State University, Pullman WA 99164
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Abstract

Electronic devices based on single crystal SiC represent a good choice for a variety of new high temperature, high power electronics applications. The challenge is to develop a package that is resistant to thermal degradation in harsh environments. Conditions are extreme and this all but rules out only a handful of materials and materials systems. Polycrystalline SiC is the material that we have chosen to study as a suitable package and materials suitability/compatibility has been considered on several levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 815 , 2004 , J8.5
Copyright
Copyright © Materials Research Society 2004

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