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Evaluation of Large Diameter InP Substrate Material

Published online by Cambridge University Press:  28 February 2011

K. D. C. Trapp ,
M. T. Asom ,
G. E. Carver ,
E. M. Monberg ,
F. A. Thiel  and
R. L. Barns
K. D. C. Trapp
Affiliation:
AT&T Bell Laboratories, Route 222, Breinigsville, PA 18031
M. T. Asom
Affiliation:
AT&T Bell Laboratories, Route 222, Breinigsville, PA 18031
G. E. Carver
Affiliation:
AT&T Bell Laboratories, P. 0. Box 900, Princeton, NJ 08540
E. M. Monberg
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
F. A. Thiel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
R. L. Barns
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

Expanding interest in large-scale fabrication of electronic and photonic devices and in the scale-up of epitoxial growth reactors is creating the need for high quality large diameter InP substrate material. This paper will discuss the evaluating of three-inch diameter semi-insulating Fe-doped InP substrate material purchased from two commercial suppliers. The results of Photon Back Scatter, Infrared Transmission Microscopy, Hall Effect, and Spatially Resolved Photoluminescence measurements will be presented and evaluated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 499
Copyright
Copyright © Materials Research Society 1989

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References

[11 Okamura, M., Hirota, Y., Yamaguchi, E., Mikami, O., Japan. J. Appl. Phys., Vol. 26, No. 6, June 1987, pp. 976–977.CrossRefGoogle Scholar
[2] Henry, R. L., Swiggard, E. M., J. Electron. Mat., 7, 1978, p. 118.CrossRefGoogle Scholar
[3] Orazio, F. D. Jr, VTI, Inc., Dayton, Ohio, private communication.Google Scholar
[4] Walker, S. J., unpublished manuscript.Google Scholar
[5] Pauw, L. J. Van der, Philips Res. Rep., Vol. 13, 1, 1968.Google Scholar
[6] Johnston, W. D. Jr, Epps, G. Y., Nahory, R. E., Pollack, M. A., Appl. Phys., Lett., vol. 33, p. 992, 1978.CrossRefGoogle Scholar
[7] Yamaguchi, A., Umebu, I., Akita, K., Fujitsu Scientific & Technical Journal, p. 71, June 1981.Google Scholar
[8] Oberstar, J. D., Streetman, B. G., Surface Science, vol. 108, p. L470, 1981.Google Scholar
[9] Street, R. A., Williams, R. H., J. Applied Physics, vol. 52, p. 402, 1981.Google Scholar
[10] Pankove, J. J., Optical Processes in Semiconductors, Dover Publications, New York, 1971, Chapter 6.Google Scholar