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The Er3+ and Yb3+-related emission from Er, Yb co-implanted Al0.70Ga0.30As/GaAs substrates prepared MOCVD method

Published online by Cambridge University Press:  26 February 2011

Tomoyuki Arai  and
Shin-ichiro Uekusa
Tomoyuki Arai
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
Shin-ichiro Uekusa
Affiliation:
Department of Electrical and Electronic Engineering, Meiji University, 1–1–1 Higashi-mita, Tama-ku, Kawasaki, Kanagawa, 214–8571, Japan
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Abstract

Ytterbium (Yb) ions were co-implanted into Al0.70Ga0.30As:Er substrates at room temperature. The photoluminescence (PL) and PL lifetime were characterized. Co-implanted Yb3+ enhanced PL intensity of Er3+-related emission. Er3+-related main peak (1538.2 nm), in addition to Yb3+ dose, was enhanced approximately twice. The energy transfers from 2F5/2 (the first excited state) → 2F7/2 (the grand excited state) of Yb3+ to 4I11/2 (the second excited state) → 4I15/2 (the grand excited state) and 4I15/2 → (the first excited state) 4I15/2 of Er3+ was observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 829: Symposium B – Progress in Compound Semiconductor Materials IV – Electronic and Optoelectronic Applications , 2004 , B2.19
Copyright
Copyright © Materials Research Society 2005

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References

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